? semiconductor components industries, llc, 2016 july, 2016 ? rev. 4 1 publication order number: mbr20l45ct/d MBR20L45CTG, mbrf20l45ctg switch-mode power rectifier 45 v, 20 a features and benefits ? low forward voltage ? low power loss/high efficiency ? high surge capacity ? 150 c operating junction temperature ? 20 a total (10 a per diode leg) ? guard?ring for stress protection applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v?0 @ 0.125 in ? weight (approximately): 1.9 grams ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 50 units per plastic tube ? these devices are pb?free and are rohs compliant* *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. dual schottky barrier rectifiers 20 amperes, 45 volts 1 3 2, 4 www.onsemi.com device package shipping ordering information marking diagrams b20l45 = device code a = assembly location y = year ww = work week aka = polarity designator g = pb?free device mbrf20l45ctg t o?220fp (pb?free) 50 units/rail to?220 case 221a style 6 3 1 2 4 ayww b20l45g aka to?220 fullpak case 221ah MBR20L45CTG t o?220 (pb?free) 50 units/rail 3 1 2 ayww b20l45g aka
MBR20L45CTG, mbrf20l45ctg www.onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 45 v average rectified forward current (rated v r ) t c = 141 c i f(av) 10 a peak repetitive forward current (rated v r , square wave, 20 khz) i frm 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 180 a operating junction temperature (note 1) t j ?55 to +150 c storage temperature t stg ?55 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s esd ratings: machine model = c human body model = 3b > 400 > 8000 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. the heat generated must be less than the thermal conductivity from junction?to?ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit maximum thermal resistance (MBR20L45CTG) junction?to?case junction?to?ambient (mbrf20l45ctg) junction?to?case r jc r ja r jc 1.9 45 2.2 c/w electrical characteristics (per diode leg) characteristic symbol value unit maximum instantaneous forward voltage (note 2) (i f = 10 a, t c = 25 c) (i f = 10 a, t c = 125 c) (i f = 20 a, t c = 25 c) (i f = 20 a, t c = 125 c) v f 0.50 0.47 0.63 0.62 v maximum instantaneous reverse current (note 2) (rated dc voltage, t c = 25 c) (rated dc voltage, t c = 125 c) i r 0.5 170 ma product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
MBR20L45CTG, mbrf20l45ctg www.onsemi.com 3 typical characteristics figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (v) 0.9 0.7 0.6 0.5 0.3 0.2 0.1 0 0.1 1 10 figure 3. typical reverse current figure 4. maximum reverse current v r , reverse voltage (v) 50 35 30 25 15 10 5 0 1e?06 1e?04 1e?03 1e?02 1e?01 1e+00 figure 5. current derating t c , case temperature ( c) 155 145 140 125 120 110 105 100 0 5 15 20 i f , instantaneous forward current (a) i r , reverse current (a) i f , average forward current (a) 0.4 100 150 c 125 c 25 c 150 c 125 c 25 c 20 40 45 130 115 135 10 square wave dc 0.8 75 c v f , maximum forward voltage (v) 0.9 0.7 0.6 0.5 0.3 0.2 0.1 0 0.1 1 10 i f , instantaneous forward current (a) 0.4 100 150 c 125 c 25 c 0.8 75 c 1e?05 75 c v r , reverse voltage (v) 50 35 30 25 15 10 5 0 1e?06 1e?04 1e?03 1e?02 1e?01 1e+00 i r , reverse current (a) 150 c 125 c 25 c 20 40 45 1e?05 75 c 150
MBR20L45CTG, mbrf20l45ctg www.onsemi.com 4 typical characteristics figure 6. forward power dissipation figure 7. typical capacitance i o , average forward current (a) v r , reverse voltage (v) 15 10 5 0 0 4 8 40 35 25 20 15 10 5 0 100 1000 10000 p fo , average power dissipation (w) c, capacitance (pf) 20 square wave 45 12 16 dc 2 6 10 14 18 30 r(t), transient thermal resistance figure 8. thermal response junction?to?ambient for MBR20L45CTG 100 0 0.1 0.00001 t 1 , time (sec) 1 0.0001 0.001 0.01 1 10 100 0.000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), transient thermal resistance figure 9. thermal response junction?to?case for MBR20L45CTG 100 0 0.1 0.00001 t 1 , time (sec) 10 0.01 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.01
MBR20L45CTG, mbrf20l45ctg www.onsemi.com 5 r(t), transient thermal resistance figure 10. thermal response junction?to?case for mbrf20l45ctg 100 0 0.1 0.00001 t 1 , time (sec) 0.1 0.0001 0.001 0.01 1 10 100 0.000001 0.01 1 10 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.001
MBR20L45CTG, mbrf20l45ctg www.onsemi.com 6 package dimensions to?220 case 221a?09 issue ah notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 6: pin 1. anode 2. cathode 3. anode 4. cathode
MBR20L45CTG, mbrf20l45ctg www.onsemi.com 7 package dimensions to?220 fullp ack, 3?lead case 221ah issue f dim min max millimeters d 14.70 15.30 e 9.70 10.30 a 4.30 4.70 b 0.54 0.84 p 3.00 3.40 e l1 --- 2.80 c 0.49 0.79 l 12.50 14.73 b2 1.10 1.40 q 2.80 3.20 a2 2.50 2.90 a1 2.50 2.90 h1 6.60 7.10 e q l1 b2 e d l p 123 b seating plane a a1 h1 a2 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area. 4. dimensions d and e do not include mold flash and gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be measured at outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.00. 6. contours and features of the molded package body may vary within the envelop defined by dimensions a1 and h1 for manufacturing purposes. 2.54 bsc m 0.14 m a a b c e/2 m 0.25 m a b 3x c 3x b note 3 front view side view section d?d alternate construction section a?a a note 6 a dd note 6 h1 p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mbr20l45ct/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. fullpak is a trademark of semiconductor components industries, llc.
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